Gallium (II) Telluride (GaTe)
- Description
Description
Gallium (II) Telluride (GaTe) is a chemical compound of gallium and tellurium. It is also named as Gallium Telluride. It is used in the production of sputtering targets as well as used for semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) in display and optical applications.
High purity CdSe material is also used as source materials for molecular bean epitaxial applications in semiconductor related researches and productions.
General Properties
| Formula | GaTe |
|---|---|
| CAS Number | 12024-14-5 |
| EC Number | 234-690-1 |
| Molar Mass | 97.32 g/mol |
| Melting Point | 824 °C (1,515 °F; 1,097 K) |
| Density | 5.44 g/cm3, solid |
| Crystal Structure | hexagonal, hP8 |
Specifications:
For high purity Gallium Telluride (GaTe), we supply with the following:
| Metal Name | Gallium Telluride (GaTe) |
| Purity | Up to 99.9999% |
| Forms | Chunks or other forms |
| Package (Vacuum-sealed) | Vacuum-sealed |
If you are in need of GaTe, please contact us for details at sales@american-gmg.com.
