Ultrahighpurity silicon, commonly referred to as semiconductorgrade crystalline polysilicon, is produced from metallurgicalgrade silicon through a rigorous chemical purification method known as the Siemens process. This process yields exceptionally pure silicon suitable for advanced electronic and photovoltaic applications.
Polysilicon exhibits material properties similar to singlecrystal silicon and can be intentionally doped with elements such as boron, phosphorus, arsenic, or antimony to achieve specific electrical characteristics. It serves as the foundational feedstock for growing singlecrystal silicon boules, which are subsequently sliced into wafers used to manufacture the vast majority of integrated circuits and semiconductor devices worldwide.
Highpurity polysilicon (undoped) is also widely used as a source material for molecular beam epitaxy (MBE)and other thinfilm deposition techniques in semiconductor research and device fabrication, supporting the development of nextgeneration electronic and optoelectronic technologies.
General Properties
| Properties | Value |
| Symbol | Si |
| CAS Number | 7440213 |
| EINECS Number | 2311308 |
| Atomic Number | 14 |
| Atomic Mass | 28.0855 u |
| Density | 2.33 g/cc |
| Melting Point | 1414 °C |
| Boiling Point | 2350–2680 °C |
| Thermal Conductivity | 149 W/(m⋅K) |
| Electrical Resistivity | ≈ 2.3 × 10⁵ Ω·cm (which is 2.3 × 10³ Ω·m) at 20–25 °C |
| Electronegativity | Pauling scale: 1.90 |
| Heat of Vaporization | 383 kJ/mol |
| Heat of Fusion | 50.21 kJ/mol |
Product Availability
We provide the ultra high-purity Silicon (Si) — Polysilicon (Undoped) tailored for semiconductor and industrial requirements.
| Purity | Up to 99.99999999% (10N) |
| Forms | Small chunk sizes |
| Package | Vacuum-sealed |
If you require any of this ultra high-purity metal, please contact our sales team for details at sales@american-gmg.com.