Indium(III) Selenide (In₂Se₃), also known as Indium Selenide or Indium Sesquiselenide, is a III–VI semiconductor compound composed of indium and selenium. It is widely recognized for its layered crystal structure, tunable band gap, and strong optoelectronic response, making it valuable across advanced electronic, photonic, and thinfilm technologies.
Highpurity In₂Se₃ is commonly used in the production of sputtering targets for thinfilm deposition processes, including PVD, CVD, and evaporation. These films are essential in semiconductor devices, display technologies, LED fabrication, photovoltaic cells, and a broad range of optoelectronic components.
In advanced semiconductor research, high purity In₂Se₃ also serves as a source material for Molecular Beam Epitaxy (MBE), enabling the growth of high quality epitaxial layers for next generation electronic and optoelectronic devices.
General Properties
| Properties | Value |
| Formula | In₂Se₃ |
| CAS Number | 12056-07-1 |
| EC / EINECS Number | 235-016-9 |
| Molar mass | 466.516 g/mol |
| Melting point | 890 °C |
| Density | 5.80 g/cm3 |
| Band Gap | Ranging from ∼1.35 to 2 eV |
| Crystal structure | Hexagonal |
Product Availability
We provide high-purity Indium(III) Selenide (In2Se3), tailored for semiconductor and industrial requirements.
| Purity | Up to 99.9999% |
| Forms | Chunks or other forms |
| Package | Small packs, vacuum-sealed |
If you require any of this high-purity metal, please contact our sales team for details at sales@american-gmg.com.