Gallium (II) Telluride (GaTe), also known as Gallium Telluride, is a binary compound composed of gallium and tellurium. As a layered III–VI semiconductor, GaTe exhibits strong anisotropy, a direct bandgap, and excellent optoelectronic properties, making it valuable for advanced electronic and photonic applications.
Highpurity GaTe is widely used in the production of sputtering targets and serves as a highquality source material for semiconductor fabrication, including chemical vapor deposition (CVD) and physical vapor deposition (PVD) processes. These deposition techniques enable the formation of highperformance thin films used in display technologies, optical coatings, and infrared devices.
Highpurity GaTe is also utilized as a source material for molecular beam epitaxy (MBE), supporting semiconductor research and device productions as well as development of nextgeneration electronic and optoelectronic devices.
Additional Applications of HighPurity GaTe
- 2D materials research and van der Waals heterostructures
- Photodetectors operating in visible and infrared ranges
- Fieldeffect transistors (FETs) based on layered semiconductors
- Nonlinear optical and electrooptic devices
- Terahertz (THz) generation and detection
- Flexible and wearable electronics
- Strainengineered optoelectronic components
- Quantum materials studies, including excitonic and spintronic systems
General Properties
| Properties | Value |
| Formula | GaTe |
| CAS Number | 12024-14-5 |
| EC / EINECS Number | 234-690-1 |
| Molar mass | 97.32 g/mol |
| Melting point | 824 °C (1,515 °F; 1,097 K) |
| Density | 5.44 g/cm3, solid |
| Band Gap | ~1.67 eV |
| Crystal structure | Monoclinic |
Product Availability
We provide high-purity Gallium Telluride (GaTe) tailored for semiconductor and industrial requirements.
| Purity | Up to 99.9999% |
| Forms | Chunks of 2-8mm or other forms |
| Package | Small packs, vacuum-sealed |
If you require any of this high-purity metal, please contact our sales team for details at sales@american-gmg.com.