HighPurity Indium Arsenide (InAs) is a premium III–V semiconductor material engineered for highperformance infrared, optoelectronic, and highspeed electronic applications. Known for its exceptionally high electron mobility, narrow bandgap, and strong midinfrared absorption, InAs delivers the precision and efficiency required for nextgeneration sensing, imaging, and communication technologies.
InAs is widely used in infrared detectors and imaging systems, where its sensitivity in the midIR range enables advanced thermal cameras, spectroscopy tools, environmental sensors, and nightvision devices. Its outstanding carrier transport properties also make it a key material for highspeed, lownoise electronics, including RF components, highelectronmobility transistors, and fast integrated circuits.
Beyond traditional electronics, highpurity InAs supports cuttingedge optoelectronic and quantum research, powering IR LEDs, laser diodes, photonic integrated circuits, and emerging quantum devices based on strong spin–orbit coupling. Its performance, purity, and versatility make InAs an essential material for innovators developing the next generation of semiconductor and photonic technologies.
General Properties
| Properties | Value |
| Formula | InAs |
| CAS Number | 1303113 |
| EC / EINECS Number | 2151153 |
| Molar Mass | 189.74 g/mol |
| Melting Point | 942 °C (lit.) |
| Density | 5.67 g/cm³ |
| Band Gap | 0.354 eV at 300 K (direct bandgap) |
| Crystal Structure | Zinc blende (cubic) |
Product Availability
We provide high-purity Indium Arsenide (InAs) tailored for semiconductor and other high-tech industrial requirements.
| Purity | Up to 99.9999% |
| Forms | Chunks or other forms |
| Package | Small packs, vacuum-sealed |
If you require any of the high-purity compounds, please contact our sales team for details at sales@american-gmg.com.