Bismuth telluride (Bi₂Te₃), also known as bismuth (III) telluride, is a wellestablished compound composed of bismuth and tellurium, widely recognized for its outstanding thermoelectric performance. In bulk form, Bi₂Te₃ is the leading material for cooling and powergeneration applications operating near ambient temperatures, making it essential in energyconversion technologies.
Bi₂Te₃ is also a key material for producing highquality sputtering targets used in thinfilm deposition, supporting the fabrication of advanced electronic and optoelectronic components.
Highpurity Bi₂Te₃ is especially critical as a source material for Molecular Beam Epitaxy (MBE), where precise stoichiometry, controlled vapor composition, and exceptional purity are required to achieve highperformance thin films. Its reliability and consistency make it indispensable for semiconductor research, quantum materials studies, and the development of next generation device architectures.
General Properties
| Properties | Value |
| Formula | Bi₂Te₃ |
| CAS Number | 1304-82-1 |
| EC / EINECS Number | 215-135-2 |
| Molar mass | 800.76 g·mol−1 |
| Melting point | 580 °C (1,076 °F; 853 K) |
| Density | 7.74 g/cm3 |
| Band Gap | ~ 0.3 eV without spin orbit |
| Crystal structure | Trigonal (hR15) |
Product Availability
We provide high-purity Bismuth Telluride (Bi2Te3) tailored for semiconductor and industrial requirements.
| Purity | Up to 99.9999% |
| Forms | Chunks or other forms |
| Package | Small packs or upon request, vacuum-sealed |
If you require any of this high-purity metal, please contact our sales team for details at sales@american-gmg.com.