Zinc telluride (ZnTe) is a binary II–VI compound semiconductor known for its direct bandgap and favorable optoelectronic properties. It is widely used in devices such as blue and green LEDs, laser diodes, photovoltaic cells, and components for microwave and infrared applications.
Highpurity ZnTe is also an essential source material for molecular beam epitaxy (MBE), where its controlled composition and low impurity levels support the growth of highquality epitaxial layers. This makes it valuable for advanced semiconductor research, device prototyping, and production environments requiring precise material performance.
General Properties
| Properties | Value |
| Formula | ZnTe |
| CAS Number | 1315-11-3 |
| EC / EINECS Number | 215-260-2 |
| Molar mass | 192.99 g/mol |
| Melting point | 1,295 °C; 2,363 °F; 1,568 K |
| Density | 6.34 g/cm3 |
| Band Gap | 2.26 eV |
| Electron mobility | 340 cm2/(V·s) |
| Crystal structure | Zincblende (cubic) |
Product Availability
We provide high-purity Zinc Telluride (ZnTe) tailored for semiconductor and industrial requirements.
| Purity | Up to 99.9999% (6N) |
| Forms | Chunks or other forms |
| Package | Small packs, vacuum-sealed |
If you require any of this high-purity metal, please contact our sales team for details at sales@american-gmg.com.